DMN5L06K document number: ds30929 rev. 5 - 2 1 of 4 www.diodes.com january 2009 ? diodes incorporated dmn5l06 k n-channel enhancement mode mosfet features ? low on-resistance ? very low gate threshold voltage (1.0v max) ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? esd protected up to 2kv ? "green" device (note 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte ti n annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 50 v gate-source voltage v gss 20 v drain current (note 1) continuous pulsed (note 3) i d 300 800 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit total power dissipation (note 1) p d 350 mw thermal resistance, junction to ambient r ja 357 c/w operating and storage temperature range t j , t stg -65 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 50 ? ? v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c i dss ? ? 60 na v ds = 50v, v gs = 0v gate-body leakage i gss ? ? 1 500 50 a na na v gs = 12v, v ds = 0v v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) 0.49 ? 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? ? ? ? ? ? 3.0 2.5 2.0 v gs = 1.8v, i d = 50ma v gs = 2.5v, i d = 50ma v gs = 5.0v, i d = 50ma on-state drain current i d ( on ) 0.5 1.4 ? a v gs = 10v, v ds = 7.5v forward transconductance |y fs | 200 ? ? ms v ds =10v, i d = 0.2a source-drain diode forward voltage v sd 0.5 ? 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss ? ? 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? 25 pf reverse transfer capacitance c rss ? ? 5.0 pf notes: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10ms, duty cycle 1%. 4. diodes inc.'s "green" policy can be found on our w ebsite at http://www.diodes.com /products/lead_free/index.php. 5. short duration pulse test used to minimize self-heating effect. sot-23 top view esd protected up to 2kv source equivalent circuit gate protection diode gate drain top view d g s
DMN5L06K document number: ds30929 rev. 5 - 2 2 of 4 www.diodes.com january 2009 ? diodes incorporated dmn5l06 k v , drain-source voltage (v) fig. 1 typical output characteristics ds v , gate-source voltage (v) fig. 2 typical transfer characteristics gs t , channel temperature (c) fig. 3 gate threshold voltage vs. channel temperature ch 0 -50 -25 0 25 50 75 100 125 150 0 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 10 r , static drain-source on-resistance ( ) ds(on) 1 i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 10 r , static drain-source on-resistance ( ) ds(on) v gate source voltage (v) fig. 6 static drain-source on-resistance vs. gate-source voltage gs, r , static drain-source on-resistance ( ) ds(on)
DMN5L06K document number: ds30929 rev. 5 - 2 3 of 4 www.diodes.com january 2009 ? diodes incorporated dmn5l06 k t , ambient temperature ( c) fig. 7 a static drain-source on-state resistance vs. ambient temperature r , static drain-source on-resistance ( ) ds(on) i , reverse drain current (a) dr i , reverse drain current (a) dr 1 i , drain current (a) d fig.10 forward transfer admittance vs. drain current | y |, f o r wa r d t r a n sfe r admi t t a n c e (s) fs 0 50 100 150 250 300 350 400 200 150 50 100 0 t , ambient temperature ( c) fig. 11 derating curve - total a p , p o we r dissi p ati o n (mw) d
DMN5L06K document number: ds30929 rev. 5 - 2 4 of 4 www.diodes.com january 2009 ? diodes incorporated dmn5l06 k ordering information (note 6) part number case packaging DMN5L06K-7 sot-23 3000/tape & reel notes: 6. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information date code key year 2006 2007 2008 2009 2010 2011 2012 code t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. sot-23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 dab = product type marking code ym = date code marking y = year (ex: t = 2006) m = month (ex: 9 = september) a m j l d f b c h k g k1 x e y c z
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